Growth and characterization of tungsten disulfide monolayer using solution precursor-assisted chemical vapor deposition method
Keywords:
transition metal dichalcogenides, chemical vapor deposition, tungsten disulfideAbstract
Transition metal dichalcogenides (TMDs) have attracted significant attention due to their unique optical and electronic properties, positioning them as promising candidates for various electronic and optoelectronic devices such as sensors, transistors, and batteries. However, the synthesis of these materials has always posed challenges, particularly in terms of achieving uniformity and controlling the precursor vapor during the synthesis procedure. In this study, we addressed these challenges by utilizing a soluble precursor. This approach enabled us to grow high-quality, monolayer tungsten disulfide flakes on SiO2/Si substrates using the chemical vapor deposition (CVD) method. By examining and adjusting various growth parameters such as growth temperature, solution precursor concentration, and substrate position, we successfully optimized the growth conditions. To characterize the monolayer flakes, we employed Raman and photoluminescence (PL) spectroscopies.
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